Impurity–vacancy defects in implanted float-zone and Czochralski-Si
نویسندگان
چکیده
w The dual implantation method developed for defect engineering O.W. Holland, L. Xie, B. Nelson, D.S. Zhou, J. Ž . x q Electron. Mater. 25 1996 99 uses an amorphizing implant in conjunction with high energy Si -ion implantation to inject vacancies. Following annealing of the implanted samples for 20 min at 6008C and at 8008C, the amorphous layer Ž . recrystallizes by solid-phase epitaxial growth SPEG , and the unwanted interstitials are consumed by recombination with vacancies. Doppler broadening of annihilation radiation and beam positron lifetime measurements reveal that there are residual divacancy–impurity complexes formed in the SPEG layer. Since the effect is nearly identical in both float-zone and Czochralski-Si, the source of the impurities is not likely to be residual oxygen in the unimplanted crystals. q 1999 Published by Elsevier Science B.V. All rights reserved.
منابع مشابه
Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si
Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both nand p-type, of highand low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 5) x 10 16 cm -2 . The Mn impurity was found to compensate acceptors in a high-resistivity p-Si and donors in a low-re...
متن کاملAnnealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si ions to a dose of 2310 cm and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 cent...
متن کاملFormation of vacancy-impurity complexes by kinetic processes in highly As-doped Si.
Positron annihilation experiments have been applied to verify the formation mechanism of electrically inactive vacancy-impurity clusters in highly n-type Si. We show that the migration of V-As pairs at 450 K leads to the formation of V-As2 complexes, which in turn convert to stable V-As3 defects at 700 K. These processes manifest the formation of V-As3 as the dominant vacancy-impurity cluster i...
متن کاملStress-Induced Nitrogen and Oxygen Segregation and Complexing Investigated by High Resolution Synchrotron FTIR
Nitrogen doped Czochralski (N-CZ) and Float Zone (N-FZ) silicon were measured by high resolution synchrotron Fourier Transform IR spectroscopy (HR-FTIR). The chemical complexes were analyzed in specific regions with known extended defects, i.e., denuded or precipitated regions of annealed N-CZ Si wafers, in N-FZ Si with ring defects and on “N-Skin” region. The absorption lines were assigned to ...
متن کاملHydrogen plasma treatment of silicon thin-film structures and nanostructured layers
The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence ...
متن کامل